Silicon-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films grown at 1 <i>µ</i>m/h by suboxide molecular-beam epitaxy
نویسندگان
چکیده
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate ∼1 µm/h with control silicon doping concentration from 5 × 1016 1019 cm−3. In S-MBE, pre-oxidized gallium in form molecular beam that is 99.98% Ga2O, i.e., suboxide, supplied. Directly supplying Ga2O surface bypasses rate-limiting first step two-step reaction mechanism involved by conventional MBE. As result, readily achieved relatively low temperature (Tsub ≈ 525 °C), resulting films high structural perfection and smooth surfaces (rms roughness &lt;2 nm on µm thick films). Silicon-containing oxide sources (SiO SiO2) producing an SiO are used dope layers. Temperature-dependent Hall effect measurements 1 film mobile carrier 2.7 1017 cm−3 reveal room-temperature mobility 124 cm2 V−1 s−1 increases 627 76 K; dopants found exhibit activation energy 27 meV. also demonstrate working metal–semiconductor field-effect transistors made these silicon-doped grown S-MBE rates µm/h.
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ژورنال
عنوان ژورنال: APL Materials
سال: 2023
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0139622